? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99251e(12/05) polarhv tm power mosfet v dss = 600 v i d25 =30 a r ds(on) 240 m ? ? ? ? ? n-channel enhancement mode avalanche rated features l fast recovery diode l unclamped inductive switching (uis) rated l international standard packages l low package inductance - easy to drive and to protect to-3p (ixtq) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c30a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p, to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 11..65/2.5..15 n/lb. weight to-247 6.0 g to-3p 5.5 g plus220 4.0 g to-268 5.0 g ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps to-268 (ixtt) g s d (tab) plus220 (ixtv) to-247 (ixth) g d s d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 30 v, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 240 m ? pulse test, t 300 s, duty cycle d 2 % g d s d (tab) plus220 (ixtv...s) g s d d (tab) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 55 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6.5v 6v 5.5v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 012345678 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6.5v 6v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 22 25 s c iss 5050 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 540 pf c rss 53 pf t d(on) 29 ns t r v gs = 10 v, v ds = 0.5 i d25 20 ns t d(off) r g = 4 ? (external) 80 ns t f 25 ns q g(on) 82 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 nc q gd 30 nc r thjc 0.23 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 500 ns q rm v r = 100v 4.0 c ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 v d s - volts i d - amperes v gs = 10v 7v 5.5v 5v 4.5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 30a i d = 15a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 7. input admittance 0 5 10 15 20 25 30 35 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - millis econds r ( t h ) j c - o c / w fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 300v i d = 15a i g = 10m a fig. 9. source curre nt vs . source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. for w ar d-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25 s
? 2006 ixys all rights reserved package outline drawings to-247ad (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-3p (ixtq) outline to-268 (ixtt) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps plus220 (ixtv) outline
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps package outline drawings plus220smd (ixtv_s) outline
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